technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044 , fax: +353 (0) 65 6822298 tel: 1 - 800 - 446 - 1158 / (978) 794 - 1666, fax : (978) 6890803 website: http: //www.micros emi.com rf01012 rev a, august 2010 hi gh rel iability product group page 1 of 5 devices m rt100kp40a thru m rt100kp400ca, e3 levels m, ma, mx, mxl features ? high reliability controlled devices with wafer fabrication and assembly lot traceability ? 100 % surge tested devices ? suppresses transients up to 100 kw @ 6. 4/69 s ? fast response with less than 5ns turn - on time ? preferred 100kw tvs for aircraft power bus protection ? optional upscreening available by replacing the m pref ix with ma, mx or mxl. these prefixes specify various screening and conforman ce inspection opt ions based on mil - prf - 19500. refer to micron ote 129 for more d etails on the screening options . ? moisture classification is level 1 with no dry pack required per ipc/jedec j - std - 020b ? rohs compliant d evices available by adding e3 suffix ? 3 lot norm screening performed on standby current i d applications / benefits ? protection from high power switching transients, induced rf, and lightning threats with comparatively small package size (0.25 inch diame ter) ? protection from esd and eft per iec61000 - 4 - 2 and iec61000 - 4 - 4 ? pin injection protection per rtca/do - 160e up to level 4 for waveform 4 (6.4/69 s) on all devices ? pin injection protection per rtca/do - 160e up to level 5 for waveform 4 (6.4/69 s) on device types m rt100kp33a or ca up to m rt100kp260a or ca ? pin injection protection per rtca/do - 160e up to level 3 for waveform 5a (40/120 s) on all devices ? pin injection protection per rtca/do - 160e up to level 4 for waveform 5a (40/120 s) on device types m rt100kp33a or ca up to m rt100kp64a or ca ? consult factory for other voltages with similar peak pulse power capabilities maximum ratings ? peak pulse power dissipation at 25 oc: 100 kw at @ 6.4/69 s in figure 8 (also see f igures 1 and 2) impulse repeti tion rate (duty factor) of 0.0 05 % ? t clamping (0 volts to v br min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional ? operating and storage temperature: - 65 o c to +150 c ? thermal resistance: 17.5 c/w junction to lead, or 77.5 c/w junction to ambient when mounted on fr4 pc board with 4 mm 2 copper pads (1 oz ) and track width 1 mm, length 25 mm ? steady - state power dissipation: 7 watts @ t l = 27.5 c or 1.61 watts at t a = 25 c when mounted on fr4 pc board described above for therma l resistance ? forward surge: 250 amps 8.3 ms half - sine wave for unidirectional devices only ? solder temperatures: 260 c for 10 s (maximum) case 5a unidirectional and bidirectional transient voltage suppressor - high reliability controlled devices - economical series for thru hole mounting - unidirectional (a) and bidirectional (ca) construction - selections for 40 to 400 v standoff voltages (v wm )
technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044 , fax: +353 (0) 65 6822298 tel: 1 - 800 - 446 - 1158 / (978) 794 - 1666, fax: (978) 6890803 website: http://www.microsemi.com _____________________________________________________________________________________________________________________________ ______ rf01012 rev a, august 2010 hi gh rel iability produ ct group page 2 of 5 mechanical and packaging ? void - free transfer molded thermosetting epoxy body meeting ul94v - 0 requirements ? tin - lead (90 % sn, 10 % pb) or rohs (100% sn) compliant annealed matte - tin plating readily solderable per mil - std - 750, method 2026 ? body marked with part number ? cathode indicated by band. no cathode band on bi - directional devices. ? weight : 1 .7 gram s (approximate) ? available in b ulk or custom tape - and - reel packaging ? tape - and - reel s tandard per eia - 296 (add tr suffix to part number) package dimensions symbols & definitions symbol definition symbol definition v wm working peak (standoff) voltage i pp peak pulse current p pp peak pulse power v c clamping voltage v br breakdown voltage i br breakdown current for v br i d standby current note: cathode indicated by band all dimensions in inches millimete rs
technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044 , fax: +353 (0) 65 6822298 tel: 1 - 800 - 446 - 1158 / (978) 794 - 1666, fax: (978) 6890803 website: http://www.microsemi.com _____________________________________________________________________________________________________________________________ ______ rf01012 rev a, august 2010 hi gh rel iability produ ct group page 3 of 5 electrical characteristics @ 25 o c note 1: fo r bidirectional construction, indicate a ca suffix (instead of a) after the part number note 2: clamping voltage does not include any variable parasitic lead inductance effects observed during the 6.4 s rise time due to lead length note 3 : the maxi mum peak pulse current (i pp ) shown represents the performance capabilities by design. * surge test screening is only performed up to 900 amps (test equipment limitations) note 4 : part numbers in bold italics are preferred devices part number (1) (4) rated stand - off voltage v w m breakdown voltage v (br) volts @ i (br) v (br) i (br) maximum clamping @ i pp (2) v c maximum reverse leakage @ v wm i d maximum peak pulse current (3) @6.4/69 s i pp maximum v (br) temperature coefficient ? v(br) volts volts ma volts ? amps amp s mv/ o c rt100kp40a rt100kp43a 40 43 44.4 - 49.1 47.8 - 52.8 20 10 78.6 84.5 1500 500 1273 * 1184 * 46 50 rt100kp45a rt100kp48a 45 48 50.0 - 55.3 53.3 - 58.9 5 5 88.5 94.3 150 150 1130 * 1061 * 52 56 rt100kp51a rt100kp54a 51 54 56.7 - 62.7 60.0 - 66.3 5 5 101 106 5 0 25 990 * 943 * 60 63 rt100kp58a rt100kp60a 58 60 64.4 - 71.2 66.7 - 73.7 5 5 114 118 15 15 878 848 68 71 rt100kp64a rt100kp70a 64 70 71.1 - 78.6 77.8 - 86.0 5 5 126 138 10 10 795 725 76 83 rt100kp75a rt100kp78a 75 78 83.3 - 92.1 86.7 - 95.8 5 5 147 153 10 10 68 0 655 89 93 rt100kp85a rt100kp90a 85 90 94.4 - 104 100 - 111 5 5 166 178 10 10 602 563 102 109 rt100kp100a rt100kp110a 100 110 111 - 123 122 - 135 5 5 197 216 10 10 508 463 121 133 rt100kp120a rt100kp130a 120 130 133 - 147 144 - 159 5 5 235 254 10 10 426 394 145 15 7 rt100kp150a rt100kp160a 150 160 167 - 185 178 - 197 5 5 296 315 10 10 338 318 183 195 rt100kp170a rt100kp180a 170 180 189 - 209 200 - 221 5 5 334 354 10 10 300 283 207 219 rt100kp200a rt100kp220a 200 220 222 - 245 245 - 271 5 5 392 434 10 10 256 231 243 269 rt10 0kp250a rt100kp260a 250 260 278 - 308 289 - 320 5 5 493 512 10 10 203 196 306 318 rt100kp280a rt100kp300a 280 300 311 - 345 333 - 369 5 5 552 590 10 10 181 170 344 368 rt100kp350a rt100kp400a 350 400 389 - 431 444 - 492 5 5 690 787 10 10 145 127 430 490
technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044 , fax: +353 (0) 65 6822298 tel: 1 - 800 - 446 - 1158 / (978) 794 - 1666, fax: (978) 6890803 website: http://www.microsemi.com _____________________________________________________________________________________________________________________________ ______ rf01012 rev a, august 2010 hi gh rel iability produ ct group page 4 of 5 g raphs c orrect inc orrect figure 3 figure 5 figure 4 figure 6 note: this p pp versus time graph allows the designer to use these parts over a broad power spectrum using the guidelines illustrated in micro note 104 on www.microsemi.com . aircraft transients are described with exponential decaying waveforms. for suppression of square - wave impulses, derate power and current to 66% of that for exponential decay shown in figure 1. p pp peak pulse power vs. pulse time C kw non - repetitive pulse tp C pulse time C sec. figure 1 peak pulse power vs. pulse time to 50% of exponentially decaying pulse peak pulse power ( p pp ) or continuous power in % of 2 5 o c rating t l lead temperature o c figure 2 power derating installation tvs devices used across power lines are subject to relatively high magnitude surge currents and are more prone to adverse parasitic inductance effects in the mounting leads. minimizing the shunt path of the lead inductance and their v = - ldi/dt effects will optimize the t vs effectiveness. examples of optimum installation and poor installation are illustrated in f igure s 3 to 6. figure 3 illustrates minimal parasitic inductance with attachment at end of device. inductive voltage drop is across input leads. virtually no overshoot voltage results as illustrated with f igure 4. the loss of effectiveness in protection caused by excessive parasitic inductance is illustrated in f igures 5 and 6. also see micronote 111 for further information on parasitic lead inductance in t vs.
technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044 , fax: +353 (0) 65 6822298 tel: 1 - 800 - 446 - 1158 / (978) 794 - 1666, fax: (978) 6890803 website: http://www.microsemi.com _____________________________________________________________________________________________________________________________ ______ rf01012 rev a, august 2010 hi gh rel iability produ ct group page 5 of 5 graphs cond. t C time t C time t - time note: frequency is 1mhz figure 7 C waveform 3 figure 8 C waveform 4 figure 9 C waveform 5a note: the 1mhz damped oscillatory waveform (3) has an effective pulse width of 4 ? s. equivalent peak pulse power at each of the pulse widths represented in rtca/do - 160e for waveforms 3, 4 and 5a (above) have been determined referencing figure 1 herein as well as micro notes 104 and 120 (found on www.microsemi.com ) and are listed below. wa veform number pulse width ? s peak pulse power kw peak pulse current conversion factor * from rated i pp at 6.4/69 s 3 4 340 3.40x 4 6.4/69 100 1.00x 5a 40/120 70 0.70x * multiply by the conversion factor shown with reference to the maximum rated i pp in the electrical characteristics table on page 2. note 1: high current fast rise - time transients of 250 ns or less can more than triple the v c from parasitic inductance effects (v= - ldi/dt) compared to the clamping voltage shown in the initial el ectrical characteristics as also described in figures 5 and 6 herein note 2: also see micronotes 127, 130, and 132 on www.microsemi.com for further information on transient voltage suppressors with reference to aircraft industry specification rtca/do - 160e. t
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